A low-power high-speed InP microdisk modulator heterogeneously integrated on a SOI waveguide.
Identifieur interne : 001015 ( Main/Exploration ); précédent : 001014; suivant : 001016A low-power high-speed InP microdisk modulator heterogeneously integrated on a SOI waveguide.
Auteurs : RBID : pubmed:22535025English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Indium, Phosphines.
- instrumentation : Refractometry, Signal Processing, Computer-Assisted, Surface Plasmon Resonance.
- Computer-Aided Design, Equipment Design, Equipment Failure Analysis, Systems Integration.
Abstract
We report on the modulation characteristics of indium phosphide (InP) based microdisks heterogeneously integrated on a silicon-on-insulator (SOI) waveguide. We present static extinction ratios and dynamic operation up to 10 Gb/s. Operation with a bit-error rate below 1 × 10(-9) is demonstrated at 2.5, 5.0 and 10.0 Gb/s and the performance is compared with that of a commercial modulator. Power penalties are analyzed with respect to the pattern length. The power consumption is calculated and compared with state-of-the-art integrated modulator concepts. We demonstrate that InP microdisk modulators combine low-power and low-voltage operation with low footprint and high-speed. Moreover, the devices can be fabricated using the same technology as for lasers, detectors and wavelength converters, making them very attractive for co-integration.
PubMed: 22535025
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">A low-power high-speed InP microdisk modulator heterogeneously integrated on a SOI waveguide.</title><author><name sortKey="Hofrichter, Jens" uniqKey="Hofrichter J">Jens Hofrichter</name><affiliation wicri:level="1"><nlm:affiliation>IBM Research – Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland. jho@zurich.ibm.com</nlm:affiliation><country xml:lang="fr">Suisse</country><wicri:regionArea>IBM Research – Zurich, Säumerstrasse 4, 8803 Rüschlikon</wicri:regionArea></affiliation></author><author><name sortKey="Raz, Oded" uniqKey="Raz O">Oded Raz</name></author><author><name sortKey="La Porta, Antonio" uniqKey="La Porta A">Antonio La Porta</name></author><author><name sortKey="Morf, Thomas" uniqKey="Morf T">Thomas Morf</name></author><author><name sortKey="Mechet, Pauline" uniqKey="Mechet P">Pauline Mechet</name></author><author><name sortKey="Morthier, Geert" uniqKey="Morthier G">Geert Morthier</name></author><author><name sortKey="De Vries, Tjibbe" uniqKey="De Vries T">Tjibbe De Vries</name></author><author><name sortKey="Dorren, Harm J S" uniqKey="Dorren H">Harm J S Dorren</name></author><author><name sortKey="Offrein, Bert J" uniqKey="Offrein B">Bert J Offrein</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="RBID">pubmed:22535025</idno><idno type="pmid">22535025</idno><idno type="wicri:Area/Main/Corpus">000D56</idno><idno type="wicri:Area/Main/Curation">000D56</idno><idno type="wicri:Area/Main/Exploration">001015</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Computer-Aided Design</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Indium (chemistry)</term><term>Phosphines (chemistry)</term><term>Refractometry (instrumentation)</term><term>Signal Processing, Computer-Assisted (instrumentation)</term><term>Surface Plasmon Resonance (instrumentation)</term><term>Systems Integration</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Indium</term><term>Phosphines</term></keywords><keywords scheme="MESH" qualifier="instrumentation" xml:lang="en"><term>Refractometry</term><term>Signal Processing, Computer-Assisted</term><term>Surface Plasmon Resonance</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Computer-Aided Design</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Systems Integration</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the modulation characteristics of indium phosphide (InP) based microdisks heterogeneously integrated on a silicon-on-insulator (SOI) waveguide. We present static extinction ratios and dynamic operation up to 10 Gb/s. Operation with a bit-error rate below 1 × 10(-9) is demonstrated at 2.5, 5.0 and 10.0 Gb/s and the performance is compared with that of a commercial modulator. Power penalties are analyzed with respect to the pattern length. The power consumption is calculated and compared with state-of-the-art integrated modulator concepts. We demonstrate that InP microdisk modulators combine low-power and low-voltage operation with low footprint and high-speed. Moreover, the devices can be fabricated using the same technology as for lasers, detectors and wavelength converters, making them very attractive for co-integration.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22535025</PMID><DateCreated><Year>2012</Year><Month>04</Month><Day>26</Day></DateCreated><DateCompleted><Year>2012</Year><Month>08</Month><Day>20</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN><JournalIssue CitedMedium="Internet"><Volume>20</Volume><Issue>9</Issue><PubDate><Year>2012</Year><Month>Apr</Month><Day>23</Day></PubDate></JournalIssue><Title>Optics express</Title><ISOAbbreviation>Opt Express</ISOAbbreviation></Journal><ArticleTitle>A low-power high-speed InP microdisk modulator heterogeneously integrated on a SOI waveguide.</ArticleTitle><Pagination><MedlinePgn>9363-70</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OE.20.009363</ELocationID><Abstract><AbstractText>We report on the modulation characteristics of indium phosphide (InP) based microdisks heterogeneously integrated on a silicon-on-insulator (SOI) waveguide. We present static extinction ratios and dynamic operation up to 10 Gb/s. Operation with a bit-error rate below 1 × 10(-9) is demonstrated at 2.5, 5.0 and 10.0 Gb/s and the performance is compared with that of a commercial modulator. Power penalties are analyzed with respect to the pattern length. The power consumption is calculated and compared with state-of-the-art integrated modulator concepts. We demonstrate that InP microdisk modulators combine low-power and low-voltage operation with low footprint and high-speed. Moreover, the devices can be fabricated using the same technology as for lasers, detectors and wavelength converters, making them very attractive for co-integration.</AbstractText><CopyrightInformation>© 2012 Optical Society of America</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Hofrichter</LastName><ForeName>Jens</ForeName><Initials>J</Initials><Affiliation>IBM Research – Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland. jho@zurich.ibm.com</Affiliation></Author><Author ValidYN="Y"><LastName>Raz</LastName><ForeName>Oded</ForeName><Initials>O</Initials></Author><Author ValidYN="Y"><LastName>La Porta</LastName><ForeName>Antonio</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Morf</LastName><ForeName>Thomas</ForeName><Initials>T</Initials></Author><Author ValidYN="Y"><LastName>Mechet</LastName><ForeName>Pauline</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Morthier</LastName><ForeName>Geert</ForeName><Initials>G</Initials></Author><Author ValidYN="Y"><LastName>De Vries</LastName><ForeName>Tjibbe</ForeName><Initials>T</Initials></Author><Author ValidYN="Y"><LastName>Dorren</LastName><ForeName>Harm J S</ForeName><Initials>HJ</Initials></Author><Author ValidYN="Y"><LastName>Offrein</LastName><ForeName>Bert J</ForeName><Initials>BJ</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Express</MedlineTA><NlmUniqueID>101137103</NlmUniqueID><ISSNLinking>1094-4087</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Phosphines</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>22398-80-7</RegistryNumber><NameOfSubstance>indium phosphide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Computer-Aided Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Phosphines</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Refractometry</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Signal Processing, Computer-Assisted</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Surface Plasmon Resonance</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Systems Integration</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>4</Month><Day>27</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>4</Month><Day>27</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>8</Month><Day>21</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">231829</ArticleId><ArticleId IdType="pubmed">22535025</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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